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Part Datasheet Search > IGBTs > Microsemi > APT100GN60LDQ4G Datasheet PDF
APT100GN60LDQ4G
$ 10.751
APT100GN60LDQ4G Datasheet PDF (9 Pages)
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APT100GN60LDQ4G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
100 A
Case/Package
TO-264-3
Power Dissipation
625 W
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
625 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625000 mW

APT100GN60LDQ4G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
26.49 mm
Size-Width
20.5 mm
Size-Height
5.21 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

APT100GN60LDQ4G Documents

Microsemi
9 Pages / 0.42 MByte
Microsemi
12 Pages / 1.03 MByte
Microsemi
9 Pages / 0.45 MByte
Microsemi
40 Pages / 4.07 MByte

APT100GN60LDQ4 Documents

Microsemi
Trans IGBT Chip N-CH 600V 229A 625000mW 3Pin(3+Tab) TO-264
Microchip
IGBT 600V 229A 625W TO264
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