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IXFN64N60P
$ 15.4
IXFN64N60P Datasheet PDF (5 Pages)
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IXFN64N60P Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
4 Pin
Voltage Rating (DC)
600 V
Current Rating
64.0 A
Case/Package
SOT-227-4
Number of Positions
4 Position
Drain to Source Resistance (on) (Rds)
0.096 Ω
Polarity
N-Channel
Power Dissipation
700 W
Threshold Voltage
5 V
Input Capacitance
1.15 nF
Gate Charge
200 nC
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
50.0 A
Rise Time
23 ns
Input Capacitance (Ciss)
12000pF @25V(Vds)
Input Power (Max)
700 W
Fall Time
24 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
700W (Tc)

IXFN64N60P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN64N60P Documents

IXYS Semiconductor
5 Pages / 0.14 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte

IXFN64N60 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXFN64N60P Power MOSFET, N Channel, 64A, 600V, 96mohm, 10V, 5V
Littelfuse
Trans MOSFET N-CH Si 600V 50A 4-Pin SOT-227B
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