APT100GT120JU2 Datasheet PDF - Microsemi

●You won"t need to worry about any lagging in your circuit with this APT100GT120JU2 IGBT transistor from Microsemi. Its maximum power dissipation is 0.4 mW. It has a maximum collector emitter voltage of ±20 V. It is made in a single configuration. This device utilizes field stop|trench technology. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.