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Part Datasheet Search > MOSFETs > ST Microelectronics > STB18N65M5 Datasheet PDF
STB18N65M5
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STB18N65M5 Datasheet PDF (18 Pages)
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STB18N65M5 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
198 mΩ
Power Dissipation
110 W
Threshold Voltage
4 V
Input Capacitance
1240 pF
Drain to Source Voltage (Vds)
650 V
Breakdown Voltage (Drain to Source)
650 V
Rise Time
7 ns
Input Capacitance (Ciss)
1240pF @100V(Vds)
Input Power (Max)
110 W
Fall Time
11 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
110W (Tc)

STB18N65M5 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.4 mm
Size-Width
9.35 mm
Size-Height
4.6 mm
Operating Temperature
150℃ (TJ)

STB18N65M5 Documents

ST Microelectronics
18 Pages / 0.72 MByte
ST Microelectronics
23 Pages / 0.8 MByte

STB18N65 Documents

ST Microelectronics
MOSFET N-Ch 650V 0.198Ω 15A MDmesh M5
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