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APT200GN60JDQ4
$ 33.89
APT200GN60JDQ4 Datasheet PDF (9 Pages)
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APT200GN60JDQ4 Specifications

TYPE
DESCRIPTION
Mounting Style
Chassis
Number of Pins
4 Pin
Case/Package
SOT-227
Power Dissipation
682000 mW
Breakdown Voltage (Collector to Emitter)
600 V
Input Capacitance (Cies)
14.1nF @25V
Input Power (Max)
682 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
682000 mW

APT200GN60JDQ4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

APT200GN60JDQ4 Documents

Microsemi
9 Pages / 0.53 MByte
Microsemi
12 Pages / 1.03 MByte
Microsemi
9 Pages / 0.51 MByte
Microsemi
40 Pages / 4.07 MByte

APT200GN60 Documents

Microsemi
Trans IGBT Chip N-CH 600V 283A 682000mW 4Pin SOT-227
Microsemi
Trans IGBT Chip N-CH 600V 283A 682000mW 4Pin SOT-227
Microsemi
Trans IGBT Chip N-CH 600V 283A 682000mW 3Pin(3+Tab) T-MAX
Microsemi
IGBT 600V 283A 682W SOT227
Microsemi
IGBT 600V 283A 682W SOT227
Microchip
IGBT MOD 600V 283A 682W ISOTOP
Microchip
IGBT 600V 283A 682W TO247
Microchip
IGBT MOD 600V 283A 682W ISOTOP
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