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Part Datasheet Search > IGBTs > ON Semiconductor > NGTB75N65FL2WG Datasheet PDF
NGTB75N65FL2WG
$ 4.5
NGTB75N65FL2WG Datasheet PDF (11 Pages)
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NGTB75N65FL2WG Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Power Dissipation
595 W
Breakdown Voltage (Collector to Emitter)
650 V
Reverse recovery time
80 ns
Input Power (Max)
595 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
595000 mW

NGTB75N65FL2WG Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

NGTB75N65FL2WG Documents

ON Semiconductor
11 Pages / 0.23 MByte
ON Semiconductor
10 Pages / 0.23 MByte
ON Semiconductor
11 Pages / 0.23 MByte

NGTB75N65FL2 Documents

ON Semiconductor
Trans IGBT Chip N-CH 650V 100A 595000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 650V 200A 536000mW 3Pin(3+Tab) TO-247 Tube
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