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Part Datasheet Search > IGBTs > Microsemi > APT25GP90BDQ1G Datasheet PDF
APT25GP90BDQ1G
$ 7.131
APT25GP90BDQ1G Datasheet PDF (9 Pages)
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APT25GP90BDQ1G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
900 V
Current Rating
72.0 A
Case/Package
TO-247-3
Power Dissipation
417000 mW
Breakdown Voltage (Collector to Emitter)
900 V
Input Power (Max)
417 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
417000 mW

APT25GP90BDQ1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

APT25GP90BDQ1G Documents

Microsemi
9 Pages / 0.41 MByte
Microsemi
12 Pages / 1.03 MByte
Microsemi
9 Pages / 0.43 MByte

APT25GP90BDQ1 Documents

Microsemi
Trans IGBT Chip N-CH 900V 72A 417000mW 3Pin(3+Tab) TO-247
Microchip
IGBT 900V 72A 417W TO247
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