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Part Datasheet Search > IGBTs > Microsemi > APT33GF120LRDQ2G Datasheet PDF
APT33GF120LRDQ2G
$ 9.804
APT33GF120LRDQ2G Datasheet PDF (9 Pages)
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APT33GF120LRDQ2G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
1.20 kV
Current Rating
64.0 A
Case/Package
TO-264-3
Power Dissipation
357000 mW
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
357 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
357000 mW

APT33GF120LRDQ2G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

APT33GF120LRDQ2G Documents

Microsemi
9 Pages / 0.46 MByte
Microsemi
12 Pages / 1.03 MByte
Microsemi
9 Pages / 0.44 MByte

APT33GF120LRDQ2 Documents

Microsemi
Trans IGBT Chip N-CH 1200V 64A 357000mW
Microsemi
Trans IGBT Chip N-CH 1200V 64A 357000mW 3Pin(3+Tab) TO-264
Microchip
IGBT 1200V 64A 357W TO264
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