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Part Datasheet Search > IGBTs > Microsemi > APT50GN60BG Datasheet PDF
APT50GN60BG
$ 4.751
APT50GN60BG Datasheet PDF (6 Pages)
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APT50GN60BG Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
107 A
Case/Package
TO-247-3
Power Dissipation
366 W
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
366 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
366000 mW

APT50GN60BG Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
21.46 mm
Size-Width
16.26 mm
Size-Height
5.31 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

APT50GN60BG Documents

Microsemi
6 Pages / 0.29 MByte
Microsemi
12 Pages / 1.03 MByte
Microsemi
6 Pages / 0.12 MByte
Microsemi
40 Pages / 4.07 MByte

APT50GN60 Documents

Microsemi
Trans IGBT Chip N-CH 600V 107A 366000mW 3Pin(3+Tab) TO-247
Microsemi
Trans IGBT Chip N-CH 600V 107A 366000mW 3Pin(3+Tab) TO-247
Microsemi
IGBT w/ anti-parallel diodeY
APT
IGBT 600V 107A 366W TO247
Microchip
IGBT 600V 107A 366W TO247
Microchip
IGBT 600V 107A 366W TO247
Microsemi
IGBT w/ anti-parallel diodeP
Microsemi
IGBT w/ anti-parallel diodeP
Microsemi
IGBT w/o anti-parallel diode
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