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Part Datasheet Search > MOSFETs > ST Microelectronics > STP11NM60 Datasheet PDF
STP11NM60
$ 2.055

STP11NM60 Datasheet PDF - ST Microelectronics

Manufacturer:
ST Microelectronics
Category:
MOSFETs
Case Package:
TO-220-3
Description:
N-channel 600V, 0.4Ω, 11A, TO-220, TO-220FP MDmesh(TM) Power MOSFET
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Documentation:
STP11NM60 Datasheet (16 Pages)
Package Outline Dimension on10 Page11 Page12 Page13 Page
STP11NM60 Datasheet PDF (16 Pages)
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STP11NM60 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
11.0 A
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.45 Ω
Polarity
N-Channel
Power Dissipation
160 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
650 V
Breakdown Voltage (Drain to Source)
600 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
11.0 A
Rise Time
20 ns
Input Capacitance (Ciss)
1000pF @25V(Vds)
Input Power (Max)
160 W
Fall Time
11 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
160W (Tc)
View Datasheet >

STP11NM60 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
9.15 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)
View Datasheet >

STP11NM60 Documents

STP11NM60 Datasheet
ST Microelectronics
16 Pages / 0.35 MByte
STP11NM60 Other Datasheet PDF
ST Microelectronics
4 Pages / 0.08 MByte
STP11NM60 Notice File
ST Microelectronics
3 Pages / 0.04 MByte
STP11NM60 Other References
ST Microelectronics
1 Pages / 0.12 MByte

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