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Part Datasheet Search > IGBTs > Microsemi > APT50GT60BRDQ2G Datasheet PDF
APT50GT60BRDQ2G
$ 5.622
APT50GT60BRDQ2G Datasheet PDF (9 Pages)
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APT50GT60BRDQ2G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
110 A
Case/Package
TO-247-3
Power Dissipation
446000 mW
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
22 ns
Input Power (Max)
446 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
446000 mW

APT50GT60BRDQ2G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

APT50GT60BRDQ2G Documents

Microsemi
9 Pages / 0.25 MByte
Microsemi
12 Pages / 1.03 MByte
Microsemi
9 Pages / 0.25 MByte
Microsemi
40 Pages / 4.07 MByte

APT50GT60BRDQ2 Documents

Microsemi
Trans IGBT Chip N-CH 600V 110A 446000mW 3Pin(3+Tab) TO-247
Microchip
IGBT 600V 110A 446W TO247
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