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Part Datasheet Search > MOSFETs > ST Microelectronics > STS2DNF30L Datasheet PDF
STS2DNF30L
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STS2DNF30L Datasheet PDF (12 Pages)
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STS2DNF30L Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
30.0 V
Current Rating
3.00 A
Case/Package
SOIC-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.09 Ω
Polarity
Dual N-Channel
Power Dissipation
1.6 W
Threshold Voltage
1.7 V
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30.0 V
Breakdown Voltage (Gate to Source)
±18.0 V
Continuous Drain Current (Ids)
3.00 A
Rise Time
20 ns
Input Capacitance (Ciss)
121pF @25V(Vds)
Input Power (Max)
2 W
Fall Time
8 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2000 mW

STS2DNF30L Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.65 mm
Operating Temperature
-55℃ ~ 150℃

STS2DNF30L Documents

ST Microelectronics
12 Pages / 0.28 MByte
ST Microelectronics
12 Pages / 0.34 MByte
ST Microelectronics
8 Pages / 0.21 MByte

STS2DNF30 Documents

ST Microelectronics
SO N-CH 30V 3A
ST Microelectronics
N-Channel 30V - 0.09Ω - 3A - SO-8 STripFET(TM) II POWER MOSFET
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