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Part Datasheet Search > IGBTs > Microsemi > APT65GP60J Datasheet PDF
APT65GP60J
$ 37.295

APT65GP60J Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Voltage Rating (DC)
600 V
Current Rating
130 A
Case/Package
SOT-227-4
Power Dissipation
431 W
Breakdown Voltage (Collector to Emitter)
600 V
Input Capacitance (Cies)
7.4nF @25V
Input Power (Max)
431 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
431000 mW

APT65GP60J Size & Package

TYPE
DESCRIPTION
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

APT65GP60J Documents

Microsemi
6 Pages / 0.1 MByte
Microsemi
12 Pages / 1.03 MByte
Microsemi
6 Pages / 0.09 MByte

APT65GP60 Documents

Microsemi
Trans IGBT Chip N-CH 600V 198A 833000mW 3Pin(3+Tab) TO-264 MAX
Microsemi
Trans IGBT Chip N-CH 600V 130A 431000mW 4Pin SOT-227
Microsemi
Trans IGBT Chip N-CH 600V 100A 833000mW 3Pin(3+Tab) T-MAX
Microsemi
Trans IGBT Chip N-CH 600V 130A 431000mW 4Pin SOT-227
Microchip
IGBT 600V 100A 833W TMAX
Microchip
IGBT 600V 198A 833W TO264
Microchip
IGBT 600V 130A 431W SOT227
Microchip
IGBT MOD 600V 130A 431W ISOTOP
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