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Part Datasheet Search > IGBTs > Microsemi > APTGT50SK170T1G Datasheet PDF
APTGT50SK170T1G
$ 30.67
APTGT50SK170T1G Datasheet PDF (4 Pages)
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APTGT50SK170T1G Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
12 Pin
Case/Package
SP-1
Power Dissipation
312 W
Breakdown Voltage (Collector to Emitter)
1700 V
Input Capacitance (Cies)
4.4nF @25V
Input Power (Max)
312 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
312000 mW

APTGT50SK170T1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
51.6 mm
Size-Width
40.8 mm
Size-Height
11.5 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

APTGT50SK170T1G Documents

Microsemi
4 Pages / 0.39 MByte
Microsemi
6 Pages / 0.43 MByte
Microsemi
40 Pages / 4.07 MByte

APTGT50SK170T1 Documents

Microsemi
Trans IGBT Module N-CH 1700V 75A 312000mW 12Pin Case SP-1
Microchip
IGBT MODULE 1700V 75A 312W SP1
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