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Part Datasheet Search > IGBTs > ON Semiconductor > NGTB10N60R2DT4G Datasheet PDF
NGTB10N60R2DT4G
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NGTB10N60R2DT4G Datasheet PDF (7 Pages)
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NGTB10N60R2DT4G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Power Dissipation
72 W
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
90 ns
Input Power (Max)
72 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
72 W

NGTB10N60R2DT4G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
175℃ (TJ)

NGTB10N60R2DT4G Documents

ON Semiconductor
7 Pages / 0.6 MByte
ON Semiconductor
11 Pages / 3.63 MByte

NGTB10N60R2DT4 Documents

ON Semiconductor
Trans IGBT Chip N-CH 600V 20A 72000mW 3Pin(2+Tab) DPAK T/R
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