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BC237BG Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

BJTs

Case Package:

TO-226-3

Description:

TO-92 NPN 45V 0.1A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

BC237BG Datasheet (4 Pages)

Package Outline Dimension on4 Page

Part Numbering System on1 Page 4 Page

BC237BG Datasheet PDF (4 Pages)

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BC237BG Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Frequency

200 MHz

Number of Pins

3 Pin

Voltage Rating (DC)

45.0 V

Current Rating

100 mA

Case/Package

TO-226-3

Number of Positions

3 Position

Polarity

NPN

Power Dissipation

350 mW

Breakdown Voltage (Collector to Emitter)

45 V

Continuous Collector Current

0.1A

hFE Min

200 @2mA, 5V

Input Power (Max)

1 W

DC Current Gain (hFE)

150

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1 W

View Datasheet >

BC237BG Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Box

Material

Silicon

Size-Length

5.2 mm

Size-Width

4.19 mm

Size-Height

5.33 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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BC237BG Environmental

BC237BG Export Classifications

BC237BG Function Overview

BC237BG Documents

BC237BG Datasheet

ON Semiconductor

4 Pages / 0.05 MByte

BC237BG Other Datasheet PDF

ON Semiconductor

9 Pages / 0.19 MByte

BC237BG Drawing Diagrams

ON Semiconductor

1 Pages / 0.01 MByte

BC237BG Notice File

ON Semiconductor

1 Pages / 0.07 MByte

BC237 Documents

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ON Semiconductor

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KEC(Korea Electronics)

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Motorola

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NXP

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Continental Device

0.35W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.1A Ic, 120 - 800 hFE

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Microsemi

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

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Central Semiconductor

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Samsung

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

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