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Part Datasheet Search > BJTs > ON Semiconductor > BC547BBU Datasheet PDF
BC547BBU
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BC547BBU Datasheet PDF (6 Pages)
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BC547BBU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
300 MHz
Number of Pins
3 Pin
Case/Package
TO-226-3
Number of Positions
3 Position
Power Dissipation
500 mW
Breakdown Voltage (Collector to Emitter)
45 V
hFE Min
200 @2mA, 5V
Input Power (Max)
500 mW
DC Current Gain (hFE)
200
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
500 mW

BC547BBU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bag
Material
Silicon
Size-Length
4.58 mm
Size-Width
3.86 mm
Size-Height
4.58 mm
Operating Temperature
-65℃ ~ 150℃

BC547BBU Documents

ON Semiconductor
6 Pages / 0.18 MByte
ON Semiconductor
10 Pages / 1.2 MByte
ON Semiconductor
4 Pages / 0.04 MByte

BC547 Documents

ON Semiconductor
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UTC
TO-92 NPN 45V 0.1A
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0.5W(1/2W) General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.1A Ic, 110 - 800 hFE
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Secos
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Philips
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NXP
Transistor NPN BC547 PHILIPS miliampere=100 TO92
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