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BC547CBU
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BC547CBU Datasheet PDF (8 Pages)
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BC547CBU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
300 MHz
Number of Pins
3 Pin
Case/Package
TO-92-3
Number of Positions
3 Position
Power Dissipation
500 mW
Breakdown Voltage (Collector to Emitter)
45 V
hFE Min
420 @2mA, 5V
Input Power (Max)
500 mW
DC Current Gain (hFE)
420
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
500 mW

BC547CBU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bag
Material
Silicon
Size-Length
4.58 mm
Size-Width
3.86 mm
Size-Height
4.58 mm
Operating Temperature
150℃ (TJ)

BC547CBU Documents

ON Semiconductor
8 Pages / 0.29 MByte
ON Semiconductor
8 Pages / 0.29 MByte
ON Semiconductor
1 Pages / 0.02 MByte
ON Semiconductor
4 Pages / 0.04 MByte

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TO-92 NPN 45V 0.1A
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0.5W(1/2W) General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.1A Ic, 110 - 800 hFE
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NPN silicon amplifier transistor
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