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2SB1260T100Q
$ 0.062
2SB1260T100Q Datasheet PDF (8 Pages)
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2SB1260T100Q Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Voltage Rating (DC)
-80.0 V
Current Rating
-1.00 A
Case/Package
SOT-89
Polarity
PNP, P-Channel
Power Dissipation
2000 mW
Breakdown Voltage (Collector to Emitter)
80 V
Continuous Collector Current
1A
hFE Min
120 @100mA, 3V
hFE Max
390
Input Power (Max)
2 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2000 mW

2SB1260T100Q Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Width
2.5 mm
Operating Temperature
150℃ (TJ)

2SB1260T100Q Documents

ROHM Semiconductor
8 Pages / 0.38 MByte
ROHM Semiconductor
8 Pages / 0.93 MByte
ROHM Semiconductor
1 Pages / 0.12 MByte

2SB1260T100 Documents

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TRANS PNP 80V 1A SOT-89
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