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Part Datasheet Search > BJTs > ON Semiconductor > BC548BTA Datasheet PDF
BC548BTA
$ 0.045
BC548BTA Datasheet PDF (6 Pages)
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BC548BTA Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
300 MHz
Number of Pins
3 Pin
Case/Package
TO-226-3
Number of Positions
3 Position
Power Dissipation
0.5 W
Breakdown Voltage (Collector to Emitter)
30 V
hFE Min
110
Input Power (Max)
500 mW
DC Current Gain (hFE)
200
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
500 mW

BC548BTA Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Material
Silicon
Size-Length
4.58 mm
Size-Width
3.86 mm
Size-Height
4.58 mm
Operating Temperature
150℃ (TJ)

BC548BTA Documents

ON Semiconductor
6 Pages / 0.18 MByte
ON Semiconductor
8 Pages / 0.29 MByte
ON Semiconductor
4 Pages / 0.04 MByte

BC548 Documents

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TO-92 NPN 30V 100mA
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Trans GP BJT NPN 30V 0.1A 3Pin TO-92 Bulk
Philips
TRANS NPN 30V 0.1A TO-92
UTC
TO-92 NPN 30V 0.1A
Continental Device
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Central Semiconductor
Trans GP BJT NPN 30V 0.1A 3Pin TO-92-18R
Secos
NPN General Purpose Transistors
Diodes
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
Samsung
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
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