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Part Datasheet Search > BJTs > ON Semiconductor > BC556BG Datasheet PDF
BC556BG
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BC556BG Datasheet PDF (7 Pages)
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BC556BG Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
280 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-65.0 V
Current Rating
-100 mA
Case/Package
TO-92-3
Polarity
PNP
Power Dissipation
625 mW
Breakdown Voltage (Collector to Emitter)
65 V
Continuous Collector Current
0.1A
hFE Min
180 @2mA, 5V
Input Power (Max)
625 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625 mW

BC556BG Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Box
Material
Silicon
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BC556BG Documents

ON Semiconductor
7 Pages / 0.07 MByte
ON Semiconductor
9 Pages / 0.19 MByte

BC556 Documents

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TO-92 PNP 65V 100mA
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0.5W(1/2W) General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 0.1A Ic, 75 - 475 hFE
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Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3
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