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IXXH50N60C3D1 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

TO-247-3

Description:

Trans IGBT Chip N-CH 600V 100A 600000mW Automotive 3Pin(3+Tab) TO-247AD

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Documentation:

IXXH50N60C3D1 Datasheet (7 Pages)

IXXH50N60C3D1 Datasheet PDF (7 Pages)

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IXXH50N60C3D1 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-247-3

Power Dissipation

600000 mW

Breakdown Voltage (Collector to Emitter)

600 V

Reverse recovery time

25 ns

Input Power (Max)

600 W

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

600000 mW

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IXXH50N60C3D1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 175℃ (TJ)

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IXXH50N60C3D1 Environmental

IXXH50N60C3D1 Export Classifications

IXXH50N60C3D1 Function Overview

IXXH50N60C3D1 Documents

IXXH50N60C3D1 Datasheet

IXYS Semiconductor

7 Pages / 0.18 MByte

IXXH50N60C3D1 Other Datasheet PDF

IXYS Semiconductor

8 Pages / 0.18 MByte

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Igbt 600V 100A 600W To247ad

IXXH50N60C3D1 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 600V 100A 600000mW Automotive 3Pin(3+Tab) TO-247AD

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