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Part Datasheet Search > BJTs > ON Semiconductor > BC846BPDW1T1G Datasheet PDF
BC846BPDW1T1G
Part 3D Model
$ 0.021
BC846BPDW1T1G Datasheet PDF (17 Pages)
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BC846BPDW1T1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
100 MHz
Number of Pins
6 Pin
Voltage Rating (DC)
65.0 V
Current Rating
100 mA
Case/Package
SC-70-6
Halogen Free Status
Halogen Free
Number of Positions
3 Position
Polarity
NPN, PNP
Power Dissipation
380 mW
Breakdown Voltage (Collector to Emitter)
65 V
Continuous Collector Current
0.1A
hFE Min
200 @2mA, 5V
Input Power (Max)
380 mW
DC Current Gain (hFE)
290
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
380 mW

BC846BPDW1T1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2 mm
Size-Width
1.25 mm
Size-Height
0.95 mm
Operating Temperature
-55℃ ~ 150℃

BC846BPDW1T1G Documents

ON Semiconductor
17 Pages / 0.13 MByte
ON Semiconductor
36 Pages / 0.15 MByte
ON Semiconductor
13 Pages / 0.11 MByte
ON Semiconductor
10 Pages / 0.16 MByte

BC846BPDW1T1 Documents

ON Semiconductor
SOT-363 NPN+PNP 65V 0.1A
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), NPN and PNP,
ON Semiconductor
SOT-363 NPN+PNP 65V 0.1A
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), NPN and PNP,
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