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BC856BLT3G
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BC856BLT3G Datasheet PDF (7 Pages)
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BC856BLT3G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
100 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-65.0 V
Current Rating
-100 mA
Case/Package
SOT-23-3
Power Rating
225 mW
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
225 mW
Breakdown Voltage (Collector to Emitter)
65 V
Continuous Collector Current
0.1A
hFE Min
220 @2mA, 5V
Input Power (Max)
225 mW
DC Current Gain (hFE)
220
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

BC856BLT3G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BC856BLT3G Documents

ON Semiconductor
7 Pages / 0.08 MByte
ON Semiconductor
22 Pages / 1.31 MByte
ON Semiconductor
6 Pages / 0.17 MByte

BC856BLT3 Documents

ON Semiconductor
SOT-23 PNP 65V 0.1A
ON Semiconductor
SOT-23 PNP 65V 0.1A
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3
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