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Part Datasheet Search > BJTs > Diodes > BCP56TA Datasheet PDF
BCP56TA
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BCP56TA Datasheet PDF (1 Pages)
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BCP56TA Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
150 MHz
Number of Pins
4 Pin
Voltage Rating (DC)
80.0 V
Current Rating
1.00 A
Case/Package
TO-261-4
Power Rating
2 W
Polarity
NPN
Power Dissipation
2 W
Breakdown Voltage (Collector to Emitter)
80 V
Continuous Collector Current
1A
hFE Min
40 @150mA, 2V
Input Power (Max)
2 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
2000 mW

BCP56TA Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

BCP56TA Documents

Diodes
1 Pages / 0.04 MByte
Diodes
293 Pages / 0.91 MByte
Diodes
7 Pages / 0.27 MByte
Diodes
7 Pages / 0.18 MByte

BCP56 Documents

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Trans GP BJT NPN 80V 1.2A 4Pin(3+Tab) SOT-223 T/R
NXP
NXP BCP56,115 Bipolar (BJT) Single Transistor, NPN, 80V, 180MHz, 650mW, 1A, 63 hFE
Infineon
NPN Silicon AF Transistors
Nexperia
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
Philips
Trans GP BJT NPN 80V 1A 4Pin(3+Tab) SC-73
Continental Device
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ST Microelectronics
MEDIUM POWER AMPLIFIER
Yageo
Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin,
TI
1500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR
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