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BD13916STU Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

BJTs

Case Package:

TO-126-3

Description:

Trans GP BJT NPN 80V 1.5A 3Pin(3+Tab) TO-126 Rail

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

BD13916STU Datasheet (4 Pages)

Package Outline Dimension on4 Page

Part Numbering System on1 Page 4 Page

BD13916STU Datasheet PDF (4 Pages)

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BD13916STU Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

80.0 V

Current Rating

1.50 A

Case/Package

TO-126-3

Power Rating

12.5 W

Number of Positions

3 Position

Polarity

NPN

Power Dissipation

1.25 W

Breakdown Voltage (Collector to Emitter)

80 V

Continuous Collector Current

1.5A

hFE Min

100 @150mA, 2V

Input Power (Max)

1.25 W

DC Current Gain (hFE)

100

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1250 mW

View Datasheet >

BD13916STU Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Rail

Material

Silicon

Size-Length

8 mm

Size-Width

3.25 mm

Size-Height

11 mm

Operating Temperature

150℃ (TJ)

View Datasheet >

BD13916STU Environmental

BD13916STU Export Classifications

BD13916STU Function Overview

BD13916STU Documents

BD13916STU Datasheet

Fairchild

4 Pages / 0.07 MByte

BD13916STU Other Datasheet PDF

Fairchild

105 Pages / 0.51 MByte

BD13916STU Drawing Diagrams

Fairchild

1 Pages / 0.04 MByte

BD13916STU Other References

Fairchild

1 Pages / 0.13 MByte

BD13916 Documents

BD139-16 Datasheet PDF

ST Microelectronics

Trans GP BJT NPN 80V 1.5A 1250mW 3Pin(3+Tab) SOT-32 Tube

BD13916 Datasheet PDF

Fairchild

TO-126 NPN 80V 1.5A

BD139-16 Datasheet PDF

Fairchild

1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126

BD139-16 Datasheet PDF

Samsung

Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

BD139-16 Datasheet PDF

Continental Device

12.5W Switching NPN Plastic Leaded Transistor. 80V Vceo, 1.5A Ic, 100 - 250 hFE. Complementary BD140-16

BD13916 Datasheet PDF

Samsung

Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

BD139-16 Datasheet PDF

Central Semiconductor

Trans GP BJT NPN 80V 1.5A 3Pin(3+Tab) TO-126 Box

BD139-16 Datasheet PDF

NXP

1.5A, 80V, NPN, Si, POWER TRANSISTOR, TO-126, PLASTIC, TO-126, 3 PIN

BD13916 Datasheet PDF

ST Microelectronics

NPN SILICON TRANSISTORS

BD139-16 Datasheet PDF

ON Semiconductor

1.5 A, 80 V NPN Bipolar Power Transistor, 1920-TUBE

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