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BD435G Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

BJTs

Case Package:

TO-126-3

Description:

TO-225 NPN 32V 4A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

BD435G Datasheet (4 Pages)BD435G Application Note (4 Pages)

BD435G Datasheet PDF (4 Pages)

View Datasheet

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BD435G Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Frequency

3 MHz

Number of Pins

3 Pin

Voltage Rating (DC)

32.0 V

Current Rating

4.00 A

Case/Package

TO-126-3

Polarity

NPN

Power Dissipation

36 W

Breakdown Voltage (Collector to Emitter)

32 V

Continuous Collector Current

hFE Min

85 @500mA, 1V

Input Power (Max)

36 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

36000 mW

View Datasheet >

BD435G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Bulk

Material

Silicon

Size-Width

2.66 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

BD435G Environmental

BD435G Export Classifications

BD435G Function Overview

BD435G Documents

BD435G Datasheet

ON Semiconductor

4 Pages / 0.04 MByte

BD435G Other Datasheet PDF

ON Semiconductor

8 Pages / 0.23 MByte

BD435G Application Note

ON Semiconductor

4 Pages / 0.07 MByte

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