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Part Datasheet Search > MOSFETs > Infineon > IPB320N20N3GATMA1 Datasheet PDF
IPB320N20N3GATMA1
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IPB320N20N3GATMA1 Datasheet PDF (11 Pages)
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IPB320N20N3GATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Rating
136 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.028 Ω
Polarity
N-Channel
Power Dissipation
136 W
Threshold Voltage
3 V
Input Capacitance
1770 pF
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
34A
Rise Time
9 ns
Input Capacitance (Ciss)
1770pF @100V(Vds)
Fall Time
4 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
136000 mW

IPB320N20N3GATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.31 mm
Size-Width
9.45 mm
Size-Height
4.57 mm
Operating Temperature
-55℃ ~ 175℃

IPB320N20N3GATMA1 Documents

Infineon
11 Pages / 0.4 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
40 Pages / 0.46 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.13 MByte

IPB320N20N3 Documents

Infineon
D2PAK N-CH 200V 34A
Infineon
Single N-Channel 200V 32mOhm 29NC 136W OptiMOS SMT Mosfet - TO-263-3
Infineon
Trans MOSFET N-CH 200V 34A 3Pin(2+Tab) D2PAK T/R
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