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Part Datasheet Search > BJTs > ON Semiconductor > BD788G Datasheet PDF
BD788G
$ 0.129
BD788G Datasheet PDF (6 Pages)
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BD788G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
50 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-60.0 V
Current Rating
-4.00 A
Case/Package
TO-126-3
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
15 W
Breakdown Voltage (Collector to Emitter)
60 V
Continuous Collector Current
4A
hFE Min
40 @200mA, 3V
Input Power (Max)
15 W
DC Current Gain (hFE)
40
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
15000 mW

BD788G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Material
Silicon
Size-Length
7.74 mm
Size-Width
2.66 mm
Size-Height
11.04 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

BD788G Documents

ON Semiconductor
6 Pages / 0.07 MByte
ON Semiconductor
50 Pages / 0.83 MByte
ON Semiconductor
6 Pages / 0.09 MByte
ON Semiconductor
3 Pages / 0.1 MByte

BD788 Documents

ON Semiconductor
TO-225-3 PNP 60V 4A
Motorola
complementary plastic silicon power transistor
ON Semiconductor
TO-225 PNP 60V 4A
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