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Part Datasheet Search > BJTs > Infineon > BFP450E6327 Datasheet PDF
BFP450E6327
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BFP450E6327 Datasheet PDF (28 Pages)
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BFP450E6327 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Voltage Rating (DC)
4.50 V
Current Rating
100 mA
Case/Package
SOT-343-4
Input Capacitance
1.2 pF
Breakdown Voltage (Collector to Emitter)
5 V
Gain
15.5 dB
hFE Min
60 @50mA, 4V
Input Power (Max)
450 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500 mW

BFP450E6327 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Material
Silicon

BFP450E6327 Documents

Infineon
28 Pages / 1.5 MByte
Infineon
29 Pages / 1.16 MByte

BFP450 Documents

Infineon
RF Small Signal Bipolar Transistor, 0.1A I(C), 1Element, L Band, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT, SOT-343, 4Pin
Siemens Semiconductor
NPN Silicon RF Transistor (For medium power amplifiers)
Infineon
Trans RF BJT NPN 4.5V 0.17A Automotive 4Pin(3+Tab) SOT-343 T/R
Infineon
Transistor: NPN; bipolar; RF; 4.5V; 170mA; 0.5W(1/2W); SOT343
Infineon
Trans RF BJT NPN 4.5V 0.17A Automotive 4Pin(3+Tab) SOT-343 T/R
Infineon
Trans GP BJT NPN 4.5V 0.17A Automotive 4Pin(3+Tab) SOT-343 T/R
Infineon
Trans RF BJT NPN 4.5V 0.17A 0.5W(1/2W) Automotive 4Pin(3+Tab) SOT-343 T/R
Infineon
Trans RF BJT NPN 4.5V 0.17A Automotive 4Pin(3+Tab) SOT-343 T/R
Infineon
NPN RF-Trans. 4V 100mA SOT343 **
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