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Part Datasheet Search > BJTs > Infineon > BFP650FH6327XTSA1 Datasheet PDF
BFP650FH6327XTSA1
$ 0.12
BFP650FH6327XTSA1 Datasheet PDF (7 Pages)
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BFP650FH6327XTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
42000 MHz
Number of Pins
4 Pin
Case/Package
TSFP-4
Number of Positions
4 Position
Polarity
NPN
Power Dissipation
500 mW
Input Capacitance
1.3 pF
Breakdown Voltage (Collector to Emitter)
4.5 V
Gain
11dB ~ 21.5dB
hFE Min
110 @80mA, 3V
Input Power (Max)
500 mW
DC Current Gain (hFE)
110
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500 mW

BFP650FH6327XTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
1.4 mm
Size-Width
0.8 mm
Size-Height
0.55 mm
Operating Temperature
150℃ (TJ)

BFP650FH6327XTSA1 Documents

Infineon
7 Pages / 0.53 MByte
Infineon
18 Pages / 1.29 MByte
Infineon
1 Pages / 0.13 MByte

BFP650FH6327 Documents

Infineon
Transistor: NPN; bipolar; RF; 13V; 150mA; 0.5W(1/2W); TSFP-4
Infineon
INFINEON BFP 650F H6327 Bipolar - RF Transistor, NPN, 4V, 42GHz, 0.5W(1/2W), 150mA, 110
Infineon
Trans RF BJT NPN 4V 0.15A 0.5W(1/2W) Automotive 4Pin TSFP T/R
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