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Part Datasheet Search > BJTs > Infineon > BFR 182 B6663 Datasheet PDF
BFR 182 B6663
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BFR 182 B6663 Datasheet PDF (6 Pages)
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BFR 182 B6663 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
12.0 V
Current Rating
35.0 mA
Case/Package
SOT-23-3
Breakdown Voltage (Collector to Emitter)
12 V
Gain
12dB ~ 18dB
hFE Min
70 @10mA, 8V
Input Power (Max)
250 mW

BFR 182 B6663 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Discontinued at Digi-Key
Packaging
Tape & Reel (TR)
Operating Temperature
150℃ (TJ)

BFR 182 B6663 Documents

Infineon
6 Pages / 0.59 MByte
Infineon
3 Pages / 0.36 MByte

BFR182 Documents

Infineon
Trans RF BJT NPN 12V 0.035A Automotive 3Pin SOT-23 T/R
Siemens Semiconductor
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
Vishay Semiconductor
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT, PLASTIC PACKAGE-3
Telefunken
Transistor,
Temic
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN,
Vishay Intertechnology
Transistor,
ITT Corporation
Circular Connector Adapter, 3 Contact(s), Male-Male
Infineon
Trans RF BJT NPN 12V 0.035A 0.25W(1/4W) Automotive 3Pin SOT-323 T/R
Infineon
Trans RF BJT NPN 12V 0.035A Automotive 3Pin SOT-23 T/R
Infineon
RF Small Signal Bipolar Transistor, 0.035A I(C), 1Element, Ultra High Frequency Band, Silicon, NPN
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