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Part Datasheet Search > BJTs > Infineon > BFR93AE6327HTSA1 Datasheet PDF
BFR93AE6327HTSA1
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BFR93AE6327HTSA1 Datasheet PDF (6 Pages)
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BFR93AE6327HTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
6000 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
12.0 V
Current Rating
90.0 mA
Case/Package
SOT-23-3
Number of Positions
3 Position
Power Dissipation
300 mW
Input Capacitance
1.9 pF
Breakdown Voltage (Collector to Emitter)
12 V
Gain
9.5dB ~ 14.5dB
hFE Min
70 @30mA, 8V
Input Power (Max)
300 mW
DC Current Gain (hFE)
70
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

BFR93AE6327HTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
1 mm
Operating Temperature
-55℃ ~ 150℃

BFR93AE6327HTSA1 Documents

Infineon
6 Pages / 0.59 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
7 Pages / 0.07 MByte
Infineon
7 Pages / 0.48 MByte
Infineon
1 Pages / 0.13 MByte
Infineon
13 Pages / 0.09 MByte

BFR93AE6327 Documents

Infineon
Transistor: NPN; bipolar; RF; 20V; 90mA; 300mW; SOT23
Infineon
Trans RF BJT NPN 12V 0.09A Automotive 3Pin SOT-23 T/R
Infineon
NPN RF-Trans. 12V 90mA SOT23 **
Siemens Semiconductor
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN
Infineon
Trans GP BJT NPN 12V 0.09A 3Pin SOT-23
Infineon
Trans RF BJT NPN 12V 0.09A Automotive 3Pin SOT-23 T/R
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