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Part Datasheet Search > MOSFETs > ON Semiconductor > MTB50P03HDLT4G Datasheet PDF
MTB50P03HDLT4G
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MTB50P03HDLT4G Datasheet PDF (9 Pages)
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MTB50P03HDLT4G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-30.0 V
Current Rating
-50.0 A
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.025 Ω
Polarity
P-Channel
Power Dissipation
125 W
Threshold Voltage
1.5 V
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30.0 V
Breakdown Voltage (Gate to Source)
±15.0 V
Continuous Drain Current (Ids)
50.0 A
Rise Time
340 ns
Input Capacitance (Ciss)
4900pF @25V(Vds)
Input Power (Max)
2.5 W
Fall Time
218 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta), 125W (Tc)

MTB50P03HDLT4G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.29 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MTB50P03HDLT4G Documents

ON Semiconductor
9 Pages / 0.08 MByte
ON Semiconductor
10 Pages / 0.13 MByte

MTB50P03HDLT4 Documents

ON Semiconductor
D2PAK P-CH 30V 50A
Motorola
50A, 30V, 0.03ohm, P-CHANNEL, Si, POWER, MOSFET
ON Semiconductor
D2PAK P-CH 30V 50A
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