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Part Datasheet Search > BJTs > NXP > BFU550WX Datasheet PDF
BFU550WX
$ 0.271
BFU550WX Datasheet PDF (22 Pages)
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BFU550WX Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-323-3
Number of Positions
3 Position
Power Dissipation
450 mW
Input Capacitance
1 pF
Breakdown Voltage (Collector to Emitter)
12 V
Gain
18 dB
hFE Min
60 @15mA, 8V
Input Power (Max)
450 mW
DC Current Gain (hFE)
60
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
450 mW

BFU550WX Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-40℃ ~ 150℃ (TJ)

BFU550WX Documents

NXP
22 Pages / 0.28 MByte
NXP
3 Pages / 0.21 MByte

BFU550 Documents

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Trans RF BJT NPN 16V 0.08A 450mW Automotive 3Pin SC-70 T/R
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12V 11GHz NPN 450mW 21.5dB Gain Wideband Silicon RF Transistor - SOT143R
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Trans RF BJT NPN 16V 0.08A 450mW Automotive 3Pin SC-70 T/R
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Trans RF BJT NPN 16V 0.08A 450mW Automotive 4Pin(3+Tab) SOT-143B T/R
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Trans RF BJT NPN 16V 0.08A 450mW Automotive 3Pin TO-236AB T/R
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Trans RF BJT NPN 30V 0.08A Automotive 4Pin(3+Tab) SOT-143R T/R
NXP
Trans RF BJT NPN 16V 0.08A 450mW Automotive 4Pin(3+Tab) SOT-143B T/R
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