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BPW85B Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

Phototransistor

Case Package:

T-1

Description:

Photodetector Transistors NPN Phototransistor 70V 0.1W(1/10W) 850nm

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

BPW85B Datasheet (6 Pages)

BPW85B Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

2 Pin

Current Rating

50.0 mA

Case/Package

T-1

Rise/Fall Time

2.3 ns

Number of Channels

1 Channel

Number of Positions

2 Position

Wavelength

850 nm

Viewing Angle

25°

Peak Wavelength

850 nm

Polarity

NPN

Power Dissipation

0.1 W

Power Consumption

100 mW

Rise Time

2 µs

Breakdown Voltage (Collector to Emitter)

70.0 V

Fall Time

2.3 µs

Operating Temperature (Max)

100 ℃

Operating Temperature (Min)

-40 ℃

Power Dissipation (Max)

100 mW

View Datasheet >

BPW85B Size & Package

TYPE

DESCRIPTION

Packaging

Bulk

Material

Silicon

Size-Length

3.4 mm

Size-Width

3.4 mm

Size-Height

4.5 mm

View Datasheet >

BPW85B Environmental

BPW85B Export Classifications

BPW85B Function Overview

BPW85B Documents

BPW85B Datasheet

VISHAY

6 Pages / 0.09 MByte

BPW85B Other Datasheet PDF

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6 Pages / 0.08 MByte

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