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Part Datasheet Search > MOSFETs > Infineon > BSC047N08NS3 G Datasheet PDF
BSC047N08NS3 G
$ 0.758
BSC047N08NS3 G Datasheet PDF (9 Pages)
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BSC047N08NS3 G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PG-TSDSON
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0039 Ω
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
2.8 V
Drain to Source Voltage (Vds)
80 V
Rise Time
17 ns
Input Capacitance (Ciss)
4800pF @40V(Vds)
Input Power (Max)
125 W
Fall Time
11 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2500 mW

BSC047N08NS3 G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5.9 mm
Size-Width
5.15 mm
Size-Height
1.27 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BSC047N08NS3 G Documents

Infineon
9 Pages / 0.28 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

BSC047N08NS3 Documents

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TDSON N-CH 80V 18A
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Trans MOSFET N-CH 80V 18A 8Pin TDSON EP
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TDSON N-CH 80V 18A
Infineon
TDSON N-CH 80V 18A
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