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BSP295E6327
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BSP295E6327 Datasheet PDF (8 Pages)
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BSP295E6327 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Voltage Rating (DC)
50.0 V
Current Rating
1.80 A
Case/Package
SOT-223-4
Power Dissipation
1.8W (Ta)
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
1.80 A
Rise Time
9.9 ns
Input Capacitance (Ciss)
368pF @25V(Vds)
Fall Time
19 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1.8W (Ta)

BSP295E6327 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

BSP295E6327 Documents

Infineon
8 Pages / 0.43 MByte
Infineon
8 Pages / 0.28 MByte

BSP295 Documents

Infineon
SOT-223 N-CH 60V 1.8A
Siemens Semiconductor
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
Siemens AG
SIPMOS® Small-Signal Transistor
Infineon
SOT-223 N-CH 60V 1.8A
Infineon
Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223; SIPMOS™
Infineon
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon
MOSFET N-CH 60V 1.8A SOT223
Infineon
Trans MOSFET N-CH 60V 1.8A Automotive T/R
Infineon
Trans MOSFET N-CH 60V 1.8A Automotive 4Pin(3+Tab) SOT-223 T/R
Infineon
SOT-223 N-CH 60V 1.8A
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