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Part Datasheet Search > Infineon > BSP295 H6327 Datasheet PDF
BSP295 H6327
$ 0.681
BSP295 H6327 Datasheet PDF (8 Pages)
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BSP295 H6327 Specifications

TYPE
DESCRIPTION
Number of Pins
4 Pin
Case/Package
SOT-223-4
Power Dissipation
1.8 W
Rise Time
9.9 ns
Input Capacitance (Ciss)
295pF @25V(Vds)
Fall Time
19 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1800 mW

BSP295 H6327 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
3.5 mm
Size-Height
1.6 mm
Operating Temperature
-55℃ ~ 150℃

BSP295 H6327 Documents

Infineon
8 Pages / 0.43 MByte
Infineon
8 Pages / 0.46 MByte

BSP295 Documents

Infineon
SOT-223 N-CH 60V 1.8A
Siemens Semiconductor
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
Siemens AG
SIPMOS® Small-Signal Transistor
Infineon
SOT-223 N-CH 60V 1.8A
Infineon
Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223; SIPMOS™
Infineon
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon
MOSFET N-CH 60V 1.8A SOT223
Infineon
Trans MOSFET N-CH 60V 1.8A Automotive T/R
Infineon
Trans MOSFET N-CH 60V 1.8A Automotive 4Pin(3+Tab) SOT-223 T/R
Infineon
SOT-223 N-CH 60V 1.8A
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