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Part Datasheet Search > BJTs > Infineon > BSP50E6327HTSA1 Datasheet PDF
BSP50E6327HTSA1
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BSP50E6327HTSA1 Datasheet PDF (8 Pages)
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BSP50E6327HTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
TO-261-4
Polarity
NPN
Breakdown Voltage (Collector to Emitter)
45 V
Continuous Collector Current
1A
hFE Min
2000 @500mA, 10V
Input Power (Max)
1.5 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Gain Bandwidth
200 MHz
Power Dissipation (Max)
1500 mW

BSP50E6327HTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Operating Temperature
150℃ (TJ)

BSP50E6327HTSA1 Documents

Infineon
8 Pages / 0.55 MByte
Infineon
7 Pages / 0.05 MByte

BSP50E6327 Documents

Infineon
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Infineon
Darlington Transistors NPN Silicn Darlingtn TRANSISTORS
Siemens Semiconductor
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Infineon
SOT-223 NPN 45V 1A
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