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Part Datasheet Search > MOSFETs > Infineon > BSS123N H6327 Datasheet PDF
BSS123N H6327
$ 0.047
BSS123N H6327 Datasheet PDF (9 Pages)
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BSS123N H6327 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Power Dissipation
0.5 W
Rise Time
3.2 ns
Input Capacitance (Ciss)
15.7pF @25V(Vds)
Fall Time
22 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500 mW

BSS123N H6327 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
1.10 mm
Operating Temperature
-55℃ ~ 150℃

BSS123N H6327 Documents

Infineon
9 Pages / 0.61 MByte

BSS123 Documents

ON Semiconductor
Trans MOSFET N-CH 100V 0.17A 3Pin SOT-23 T/R
Fairchild
Trans MOSFET N-CH 100V 0.17A 3Pin SOT-23 T/R
NXP
N CHANNEL MOSFET, 150mA,100V,SOT-23
Infineon
Trans MOSFET N-CH 100V 0.17A 3Pin SOT-23
Siemens Semiconductor
Siemens# Bss123 Mosfet n-Ch 100V 170mA Sot-23
Leshan Radio
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
National Semiconductor
TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal
Freescale
MOSFET N-CH 100V 170mA SOT-23
Nexperia
Small Signal Field-Effect Transistor, 0.15A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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