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BSS126H6327XTSA2
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BSS126H6327XTSA2 Datasheet PDF (9 Pages)
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BSS126H6327XTSA2 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Power Rating
0.5 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
280 Ω
Polarity
N-Channel
Power Dissipation
500 mW
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
0.021A
Rise Time
9.7 ns
Maximum Forward Voltage (Max)
1.2 V
Input Capacitance (Ciss)
28pF @25V(Vds)
Input Power (Max)
500 mW
Fall Time
115 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500 mW

BSS126H6327XTSA2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
1.1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BSS126H6327XTSA2 Documents

Infineon
9 Pages / 0.29 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
19 Pages / 0.88 MByte
Infineon
1 Pages / 0.13 MByte

BSS126H6327 Documents

Infineon
INFINEON BSS126 H6327 Power MOSFET, N Channel, 21mA, 600V, 280Ω, 10V, -2V
Infineon
Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Infineon
SOT-23 N-CH 600V 0.021A
Infineon
MOSFET N-CH 600V 0.021A SOT23
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