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BSS139 E6327
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BSS139 E6327 Datasheet PDF (9 Pages)
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BSS139 E6327 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
250 V
Current Rating
30.0 mA
Case/Package
SOT-23-3
Power Dissipation
360mW (Ta)
Input Capacitance
76.0 pF
Gate Charge
3.50 nC
Drain to Source Voltage (Vds)
250 V
Continuous Drain Current (Ids)
30.0 mA
Rise Time
5.4 ns
Input Capacitance (Ciss)
76pF @25V(Vds)
Input Power (Max)
360 mW
Fall Time
182 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
360mW (Ta)

BSS139 E6327 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

BSS139 E6327 Documents

Infineon
9 Pages / 0.24 MByte
Infineon
6 Pages / 0.08 MByte

BSS139 Documents

Infineon
Low Voltage MOSFETs \\- Depletion MOSFET, 250V, SOT-23, RDSon = 30Ω, 30mA, LL
Siemens Semiconductor
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
Siemens AG
SIPMOS® Small-Signal-Transistor
Infineon
SOT-23 N-CH 250V 0.1A
Infineon
Trans MOSFET N-CH 250V 0.1A 3Pin SOT-23 T/R
Infineon
Small Signal Field-Effect Transistor, 0.1A I(D), 250V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Infineon
Trans MOSFET N-CH 250V 0.1A 3Pin SOT-23 T/R
Infineon
Trans MOSFET N-CH 250V 0.1A 3Pin SOT-23 T/R
Infineon
SOT-23 N-CH 250V 0.1A
Infineon
SOT-23 N-CH 250V 0.1A
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