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BSS139H6327XT
$ 0.117
BSS139H6327XT Datasheet PDF (9 Pages)
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BSS139H6327XT Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOT-23-3
Polarity
N-CH
Power Dissipation
360 mW
Drain to Source Voltage (Vds)
250 V
Continuous Drain Current (Ids)
0.1A
Rise Time
5.4 ns
Fall Time
182 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

BSS139H6327XT Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
1.1 mm

BSS139H6327XT Documents

Infineon
9 Pages / 0.54 MByte
Infineon
3 Pages / 0.14 MByte

BSS139H6327 Documents

Infineon
Trans MOSFET N-CH 250V 0.1A 3Pin SOT-23 T/R
Infineon
Small Signal Field-Effect Transistor, 0.1A I(D), 250V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Infineon
SOT-23 N-CH 250V 0.1A
Infineon
SOT-23 N-CH 250V 0.1A
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