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Part Datasheet Search > MOSFETs > Infineon > BSS209PWH6327XTSA1 Datasheet PDF
BSS209PWH6327XTSA1
$ 0.051
BSS209PWH6327XTSA1 Datasheet PDF (9 Pages)
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BSS209PWH6327XTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-323-3
Power Rating
0.3 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.379 Ω
Polarity
P-CH
Power Dissipation
300 mW
Threshold Voltage
0.9 V
Input Capacitance
87 pF
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
0.63A
Rise Time
7 ns
Input Capacitance (Ciss)
115pF @15V(Vds)
Input Power (Max)
300 mW
Fall Time
4.6 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

BSS209PWH6327XTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2 mm
Size-Width
1.25 mm
Size-Height
0.8 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BSS209PWH6327XTSA1 Documents

Infineon
9 Pages / 0.24 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

BSS209PWH6327 Documents

Infineon
Small Signal Field-Effect Transistor, 0.63A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Infineon
MOSFET P-Ch -20V -630mA SOT-323-3
Infineon
SOT-323P-CH 20V 0.63A
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