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Part Datasheet Search > MOSFETs > Infineon > BSS670S2LH6327XTSA1 Datasheet PDF
BSS670S2LH6327XTSA1
$ 0.039
BSS670S2LH6327XTSA1 Datasheet PDF (8 Pages)
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BSS670S2LH6327XTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Power Rating
0.36 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.346 Ω
Polarity
N-Channel
Power Dissipation
360 mW
Threshold Voltage
1.6 V
Drain to Source Voltage (Vds)
55 V
Breakdown Voltage (Drain to Source)
55 V
Continuous Drain Current (Ids)
0.54A
Rise Time
25 ns
Input Capacitance (Ciss)
56pF @25V(Vds)
Fall Time
24 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
360 mW

BSS670S2LH6327XTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
1.1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BSS670S2LH6327XTSA1 Documents

Infineon
8 Pages / 0.14 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
19 Pages / 0.88 MByte
Infineon
1 Pages / 0.13 MByte

BSS670S2LH6327 Documents

Infineon
Trans MOSFET N-CH 55V 0.54A 3Pin SOT-23 T/R
Infineon
Small Signal Field-Effect Transistor, 0.54A I(D), 55V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Infineon
SOT-23 N-CH 55V 0.54A
Infineon
MOSFET N-Ch 55V 540mA SOT-23-3
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