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Part Datasheet Search > MOSFETs > Infineon > IRFB7434PBF Datasheet PDF
IRFB7434PBF
$ 0.586
IRFB7434PBF Datasheet PDF (10 Pages)
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IRFB7434PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
294 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.00125 Ω
Polarity
N-Channel
Power Dissipation
294 W
Threshold Voltage
3 V
Input Capacitance
10820 pF
Drain to Source Voltage (Vds)
40 V
Breakdown Voltage (Drain to Source)
40 V
Continuous Drain Current (Ids)
317A
Rise Time
68 ns
Input Capacitance (Ciss)
10820pF @25V(Vds)
Input Power (Max)
294 W
Fall Time
68 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
294W (Tc)

IRFB7434PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10.67 mm
Size-Width
4.83 mm
Size-Height
16.51 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFB7434PBF Documents

Infineon
10 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
2 Pages / 0.06 MByte

IRFB7434 Documents

Infineon
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package
Infineon
TO-220AB N-CH 40V 317A
International Rectifier
TO220/MOSFET, 40V, 195A, 1.6MOHM, 216NC QG
Infineon
MOSFET MOSFET, 40V, 195A, 1 216NC Qg, TO-220AB
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