DG417BDQ-T1-E3 Datasheet PDF - Vishay Semiconductor

●DESCRIPTION

●The DG417B, DG418B, DG419B monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high speed, low on-resistance and small physical size, the DG417B series is ideally suited for portable and battery powered industrial and military applications requiring high performance and efficient use of board space.

●To achieve high-voltage ratings and superior switching performance, the DG417B series is built on Vishay Siliconix’s high voltage silicon gate (HVSG) process. Break before-make is guaranteed for the DG419B, which is an SPDT configuration. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off.

●The DG417B and DG418B respond to opposite control logic levels as shown in the Truth Table.

●FEATURES

●• ± 15 V analog signal range

●• On-resistance - RDS(on): 15 Ω

●• Fast switching action - tON: 110 ns

●• TTL and CMOS compatible

●• MSOP-8 and SOIC-8 package

●• Compliant to RoHS directive 2002/95/EC

●BENEFITS

●• Widest dynamic range

●• Low signal errors and distortion

●• Break-before-make switching action

●• Simple interfacing

●• Reduced board space

●• Improved reliability

●APPLICATIONS

●• Precision test equipment

●• Precision instrumentation

●• Battery powered systems

●• Sample-and-hold circuits

●• Military radios

●• Guidance and control systems

●• Hard disk drivers