IGW40N120H3FKSA1 Datasheet PDF - Infineon

●The IGW40N120H3 is a High Speed IGBT in Trench and field-stop technology recommended in combination with SiC diode IDH15S120. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.

● Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz

● Low switching losses for high efficiency

● Fast switching behaviour with low EMI emissions

● Optimized diode for target applications, meaning further improvement in switching losses

● Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour

● Short-circuit capability

● Excellent performance

● Low switching and conduction losses

● Very good EMI behaviour

● Small gate resistor for reduced delay time and voltage overshoot

● Best-in-class IGBT efficiency and EMI behaviour

● Packaged with and without freewheeling diode for increased design freedom

● Green product

● Halogen-free