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DMMT5551S Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

BJTs

Case Package:

SOT-26

Description:

TRANS, NPNNPN MAT, 180V, 0.2A, SOT26; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Power Dissi...

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Documentation:

DMMT5551S Datasheet (4 Pages)

Part Numbering System on3 Page

DMMT5551S Datasheet PDF (4 Pages)

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DMMT5551S Specifications

TYPE

DESCRIPTION

Number of Pins

6 Pin

Case/Package

SOT-26

Number of Positions

6 Position

Polarity

NPN

Power Dissipation

300 mW

Breakdown Voltage (Collector to Emitter)

160 V

Continuous Collector Current

0.2A

DC Current Gain (hFE)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

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DMMT5551S Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Cut Tape (CT)

Operating Temperature

-55℃ ~ 150℃

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DMMT5551S Environmental

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DMMT5551S Datasheet

Vishay Semiconductor

4 Pages / 0.11 MByte

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